Plasma enhanced CVD system consists of a plasma generator, a three-heating zone tube furnace, a single-heating zone tube furnace, an RF power supply, and a vacuum system.
In order for the chemical reaction to take place at a lower temperature, the activity of the plasma is utilized to promote the reaction, and thus the CVD is called plasma enhanced chemical vapor deposition (PECVD). The PECVD graphene film preparation device ionizes a gas containing a film constituent atom by means of a RF output of 13.56 Mhz, forms a plasma in a vacuum chamber, utilizes strong chemical activity of the plasma, improves reaction conditions, and utilizes plasma activity to promote the reaction, then deposits a desired film on the substrate.
Application range:
This equipment can be used in various test places such as graphene preparation, sulfide preparation, and nanometer material preparation. Various films such as SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano-silicon, SiC, diamond-like, etc. can be deposited on the surface of a sheet or similar shaped sample, and p-type and n-type doped films can also be deposited. The deposited film has good uniformity, compactness, adhesion, and insulation. It is widely used in the fields of cutters, high-precision molds, hard coatings, high-end decoration, etc.